نوع مقاله : مقاله پژوهشی
نویسنده
کارشناسی ارشد مهندسی برق - دانشگاه بیرجند- بیرجند- ایران
چکیده
کلیدواژهها
عنوان مقاله [English]
نویسنده [English]
Abstract : The wide application of wideband RF amplifiers in a variety of telecommunication and electronic circuits has led researchers to optimize their design. An important issue in the design of RF amplifiers is the consideration of transistor values resistors and bias voltages which complicate the design of manual calculations. In this paper the structure of a inductorless wideband amplifier is proposed by the user and the values of the circuit components including transistor width, resistor values and bias voltages are designed and proposed by multi-objective algorithms and power gain (S21) input impedance (S11) noise number (NF) and power consumption are optimized by these algorithms. The results obtained by using detailed element models in the simulation show the considerable ability of these algorithms to find the values of the best-valued circuit components. The algorithm programs were written with Matlab and the circuit was simulated by Hspice with 0.18 µm technology.
کلیدواژهها [English]
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