Please revised the following text without changing the concept but increase word to 150

This letter presents a fully integrated wideband, ultralow average noise figure (NF), low power consumption, which provides a frequency range of 10 to 23 GHz. The LNA achieves a noise figure of 2.2 dB and an average gain of 17 dB with a gain ripple of 3 dB in the frequency range of 10 to 23 GHz. It consumes 16 mA at 1 V supply. In the circuit design, several techniques are used to realize a high-performance broadband LNA, including peak gain distribution, large transistor in the first stage, and peak gain distribution technique with series inductor, which enables broadband gain characteristics in a simple structure [2] [6]. The large transistor technique provides very low noise performance with reduced loss. This amplifier has been able to achieve high values with only two transistor stages in 65nm CMOS technology and also significantly improve the noise figure by using a series inductor in the gate of the second transistor.